Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

GaP films were epitaxially grown on GaP substrates at a low temperature ∼200 °C using gas source molecular beam epitaxy (MBE). The lattice constant of these LT GaP films was found to be larger than that of both the GaP substrate and films grown at high temperatures. These results can be explained by excess phosphorus present in these LT films. The resistivity of these films is comparable to that of the semi‐insulating (SI) GaP substrate. These results are considered the first demonstration of high resistivity, semi‐insulating LT GaP films.