Nitrides optoelectronic devices grown by molecular beam epitaxy

We report on the characteristics of our recent room temperature continuous-wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave (cw) threshold current of 110 mA, corresponding to a threshold current density of 5.5 kA cm -2 . We report on our steps taken to reduce threshold voltage to 7 V. Lasers with uncoated facets have a maximum cw output power of 14 mW and a cw characteristic temperature T 0 of 123 K. Cw laser lifetime vs. power dissipation data is presented, with a maximum lifetime of 2.6 hours for the best laser.