Spatially Modeless Laser Cavity based on III-V Semiconductor technology: Non linear localized light

Degenerate laser cavity have been used for second-harmonic generation [1] , [2] and spatially incoherent laser emission using solid-state gain medium and monolithic VCSEL with large area of excitation [3] , [4] . In this work we investigate cw spatial coherent states of a degenerate laser cavity using specially design 1/2-VCSEL based on III-V semiconductor technology, and high numerical aperture optical system, in order to be used in spatio-temporal localization of light also know as Light Bullets [5] . The external cavities implemented are made up two(four) lenses in 4-(-8)f self-imaging configurations. A Zeemax and optical physics study was carried out to design the optimized system of lenses to ensure high numerical aperture and high resolution down to wavelength scale with minimal aberrations for off axis operation. The Semiconductor Gain Mirror (1/2-VCSEL) have been designed based on GaAs materials at 1060nm wavelength and for efficient optical pumping at 800nm using commercial diode laser. The high reflectivity mirror is designed with an GaAs/AlAs bragg mirror and the optical gain is provided through a multi-quantum-well strained-balanced InGaAs/GaAsP active region. The 1/2-VCSEL was designed with the intent to minimize all waveguiding effect such as the thermal lens and strong self-guiding through gain saturation.