A diamond driver-active load pair fabricated by ion implantation

Abstract Natural type IIa diamonds were implanted with boron at 77 K, using a multiple step, low temperature boron ion implantation procedure to produce an approximately uniformly doped p -type layer of about 200 nm thickness. This layer was used to fabricate metal insulator semiconductor field effect transistor devices operating in the depletion mode, with good uniformity from device to device. Two of the devices were used to fabricate a simple demonstration circuit with a voltage gain of two.