Infrared linear image sensor using a poly-Si pn junction diode array

Abstract An IR linear image sensor using a poly-Si pn junction diode array has been developed. The poly-Si pn junction diode detector is supported on a thin insulating membrane formed using anisotropic etching and a sacrificial poly-Si etching settler. The fabrication of this linear image sensor allows compatible integration of both IR detectors and conventional Si-IC processes. This sensor consists of 16 bit elements, each of 400 μm × 400 μm dimensions, and overall area 10.0 × 2.5 mm 2 . We obtained, at room temperature, the values Rv = 50 V W and D ∗ = 6.0 × 10 5 cm Hz 1 2 /W .