The liquid-phase epitaxial growth of low net donor concentration (5 × 10 14 -5 × 10 15 /cm 3 ) GaSb for detector applications in the 1.3 - 1.6 µm region

We report on the liquid-phase epitaxial (LPE) growth of low doped n-GaSb for long wavelength photodiodes. Very low net donor concentration epilayers ( 5 \times 10^{14}-5 \times 10^{15} /cm 3 ) were grown both from undoped Ga rich solutions in the 300-375\deg C range and by compensation using Ga-rich solutions at \sim500\deg C with intentionally added Te. The preparation of Au-GaSb Schottky diodes for C-V profiling is also discussed.