Refreshable Decrease In Peak Height Of Ion Beam Induced Transient Current From Silicon Carbide Metal‐Oxide‐Semiconductor Capacitors

MOS capacitors were fabricated on an n‐type 6H‐SiC epitaxial layer, and charge induced in the nMOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC). The peak amplitude of TIBIC signals decreases and the fall time increases with increasing number of incident ions. The TIBIC signal peak value can be refreshed to its original value by applying a forward bias of +1 V to the oxide electrode. Since the values of the effective bias applied to gate oxide are changed by the charge state of deep hole traps, the decrease and refreshment of TIBIC peak can be interpreted in terms of change in the effective gate bias due to charge trapping and recombination by deep hole traps, respectively.