Ultraviolet Electroluminescence from Randomly Assembled n-SnO2 Nanowiresp-GaN:Mg Heterojunction
2010
Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO2 nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO2 nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
16
References
34
Citations
NaN
KQI