Simulation of ultra-low energy ion implantation from a remote plasma source using Monte Carlo techniques

We present simulation as well as experimental data for ultra-low energy nitrogen ion implants from a remote nitrogen plasma source. Nitrogen plasma ion implantation is used to create highly effective diffusion barriers for dopants. We used a commercially available plasma etch tool to create a diffusion barrier for boron in a p-channel CMOS device to avoid boron penetration as well as to decrease the electrical thickness of the gate oxide. We employ a Monte Carlo ion implantation tool to simulate the penetration depth as well as doping levels for the nitrogen plasma doping.