Low threshold current 780 nm AlGaAs buried heterostructure lasers on ridged GaAs substrate aligned to [011~], fabricated using single-step MOCVD

Buried heterostructure (BH) AlGaAs lasers were fabricated using single-step metal organic chemical vapour deposition (MOCVD) on a ridged GaAs substrate aligned to the [011~] direction. A low threshold current of 8 mA was obtained and the characteristic temperature was 182.1 K. The lasing wavelength was /spl sim/780 nm.