Old Web
English
Sign In
Acemap
>
Paper
>
Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing
Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing
2017
Kwan-Soo Kim
Goon-Ho Park
Hirokazu Fukidome
Tetsuya Suemitsu
Taiichi Otsuji
Won Ju Cho
Maki Suemitsu
Keywords:
Graphene
Dielectric
Analytical chemistry
Epitaxy
Physics
Annealing (metallurgy)
Quality gate
Microwave
Optoelectronics
Optics
epitaxial graphene
microwave assisted
Correction
Source
Cite
Save
Machine Reading By IdeaReader
42
References
1
Citations
NaN
KQI
[]