GaN-based high-voltage light-emitting diodes with backside reflector

High-voltage light-emitting diodes (HV-LED) withbackside reflector, including Ti3O5/SiO2 distributed Bragg reflector (DBR) or hybrid reflector combining DBR and Al or Ag metal layer, are investigated using Monte Carlo ray tracing method. The hybrid reflector leads to more enhancement of light-extraction efficiency (LEE). Moreover, the LEE can also be improved by redesigning the thicknesses of DBR. HV-LED with four redesigned DBR pairs (4-MDBR), and those with a hybrid reflector combining 4-MDBR and Al metal layer (4-MDBR-Al), are fabricated. Compared to 4-MDBR, the enhancement of light-output power induced by 4-MDBR-Al is 4.6%, which is consistent with the simulated value of 4.9%.