Method of Manufacturing Semiconductor Integrated Circuit Having Phase change Layer

The semiconductor integrated circuit device comprising: providing a semiconductor substrate including a lower electrode, forming an interlayer insulating film having a phase-change region exposing the lower electrode on the semiconductor substrate, the interlayer insulating layer and the exposed lower electrode surface a according to the step, and the step of the phase-change region is filled such that the first phase change layer of the first phase-change film, a crystalline second growth phase-change film along the top to form a first phase shift film having a crystalline state It can be formed.