Addressable field emitter arrays with high density patterned ZnO nanowire emitters and under-gate structure

Addressable ZnO nanowire field emitter arrays have potential application in vacuum microelectronic devices. In this study, an under-gate structure ZnO nanowire field emitter arrays were designed and successfully fabricated using microfabrication process. High density patterned ZnO nanowires were used in each pixel to minimized the screen effect and increase the emission current. Modulation of field emission current by the gate voltage was achieved.