Short lifetime components in the relaxation of boron acceptors in silicon
2018
We present time-resolved measurements of the relaxation between the orbital states of the
shallow acceptor boron in silicon. The silicon host was enriched Si-28, which exhibits life-time
broadened absorption lines. We observed a wide range of T1 lifetimes from 6ps to 130ps
depending on the excited state and the pump intensity. The fastest transients have not been
observed previously in the time domain, and they are caused by the phonon relaxation
responsible for the small-signal frequency domain line-width. We identify the slower
components with an ionisation/recombination/cascade pathway.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
10
References
10
Citations
NaN
KQI