High reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates

The high-reliability performance of G-band (180 GHz) MMIC amplifiers fabricated using 0.07 pm T-gate pseudomorphic InGaAs/InAlAs/InP HEMTs on 3-inch wafers is reported. Low noise amplifiers were life-tested at two-temperatures (T/sub 1/ = 200/spl deg/C and T/sub 2/ = 215/spl deg/C) and stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2/spl times/10/sup 6/ hours at a channel temperature of 125/spl deg/C. MTTF was determined by 2-temperature constant current stress using |/spl Delta/G/sub mp/| > 20% as the failure criteria. This is the first demonstration of the high reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on a 3-inch InP production process. This result demonstrates a robust 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT production technology for G-band applications.