Old Web
English
Sign In
Acemap
>
Paper
>
Cathodoluminescence and TEM characterization of defects in III-V materials grown on Ge-terminated Si substrates
Cathodoluminescence and TEM characterization of defects in III-V materials grown on Ge-terminated Si substrates
1992
D. P. Malta
J. B. Posthill
P.R. Sharps
T S Colpitts
Michael Timmons
R. J. Markunas
Keywords:
Crystallography
Materials science
Cathodoluminescence
Correction
Source
Cite
Save
Machine Reading By IdeaReader
2
References
0
Citations
NaN
KQI
[]