Fabrication of uniform InGaAs/GaAs quantum wires on V-grooved substrate by chemical beam epitaxy

Abstract The stacking of strained InGaAs/GaAs quantum wires was realized by chemical beam epitaxy on V-grooved substrates. In order to stack the uniform InGaAs quantum wires, we have systematically studied the resharpening factor of GaAs barrier layers. The optimal growth condition of GaAs barrier for recovering distorted V-shape was determined to be the use of monoethylarsine as group V source gas at a growth temperature of 450°C. Consequently, we have vertically stacked triple InGaAs quantum wires with an equal size of 300 A ×500 A at the bottom of V-groove. The existence of the quantized state in quantum wires was evidenced by photoluminescence spectra of as-grown and selectively etched samples.