Jumping and hysteresis effect in 1–1-typed magnetoelectric resonators

Multiferroic magnetoelectric (ME) composites have been continually attracting researchers' attention because of the significant potential for building functional devices. Unlike conventional ME devices under quasi-static or low-power excitation, e.g., sensors, energy harvesters, and random memories, high-power ME devices like recently proposed ME antennas will perform complex dynamic behavior. The voltage-driven nonlinearity in 1–1-typed ME resonators was reported from the perspective of frequency-response curve in our last work. Here, we described both theoretically and experimentally a previously unobserved jumping and hysteresis effect in its magnetic bias characteristic. A direct link between the bias-response and the frequency-response characteristics was also experimentally provided to analyze the origin of the nonlinear behavior in the bias-response curve. In addition, the cubic spring constant k3 was theoretically calculated and compared to qualitatively explain the difference of our obtained threshold voltage that generated the first and second jumping resonances in the dual-peak bias-response curve. In contrast to our previous research, this work reveals the loading direction of the applied magnetic bias field, which plays a significant role when we consider the selection of an optimized bias field for high-power ME devices. Moreover, the sharp jumping in the bias-response curve is also a potential for opening dimensions for ME community.