Electron irradiation induced crystallization of amorphous Al2O3 films on silicon substrates

An in situ study of electron beam irradiation induced amorphous–to–crystalline transformation of Al2O3 films on silicon substrates has been carried out using transmission electron microscopy. Trigonal α–Al2O3 crystallites can be observed for electron beam dose rates larger than 10 mA/cm2. It is found that the nucleation and growth processes dominate near the Al2O3–Si interface. The possible effect of the silicon substrate on the growth of Al2O3 crystallites is considered.