Method for determining the recombination at a measurement portion of a measurement site of a semiconductor structure

The invention relates to a method for the determination of recombination on a measurement portion of a measurement site of a semiconductor structure, wherein the semiconductor structure comprises a base and at the measurement side, at least the measuring portion and a reference portion which is formed for the supply or discharge of charge carriers, the method comprising method steps comprising: A generating excess minority charge carriers at least in the base of the semiconductor structure, B is carried out measuring the excess charge carrier density in the base or of an at least qualitatively corresponding to the excess carrier density size, wherein at least a first measurement M C. generating a flow of current I in the semiconductor structure with an external voltage V between the reference partial area and connected to the base of the semiconductor structure base contact, wherein the external voltage V or the current I is selected such that the measurement result of the first measurement M D determining the recombination of the measuring partial region of the semiconductor surface depending on the applied external voltage V and the current flowing between the reference portion and the base contact current I.