Deep-Level Transient Spectroscopy of Interface States in ZnO/PrCoOx/ZnO Thin-Film Junctions

Deep-level transient spectroscopy is successfully applied to detect interface states in ZnO/PrCoOx/ZnO thin-film junctions. The interface state is measured at 0.70 eV below the conduction-band edge. The junctions are equivalent to a model of a single grain boundary in a ceramic varistor.