Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient

Annealing in oxygen ambient was found to be effective for realizing a high hole concentration in p-type Al0.17Ga0.83N:Mg. The maximum hole concentration obtained was 1.3×1016 cm-3 at room temperature. Hydrogen dissociation from Mg-doped Al0.17Ga0.83N is found to be enhanced by annealing in a flow of O2 compared with annealing in a flow of N2.