Organic thin-film transistors with electron-beam cured and flash vacuum deposited polymeric gate dielectric

The electrical characteristics of pentacene organic field effect transistors (OFETs) based on cross-linked acrylic insulator as the gate dielectric are reported. Vacuum deposited thin films of cross-linked tripropyleneglycol diacrylate could be obtained by ultrahigh flash evaporation rate and subsequent irradiation using an electron-beam source. The characteristics of common gate OFETs, on highly conductive Si substrate, were tuned through the ease of control of the acrylic dielectric thickness achieving, without surface modification of the dielectric layer, a field effect mobility value of 0.09 cm2 V−1 s−1, a threshold voltage of 10 V, and an on/off current ratio of 1.3 × 103. This work could provide an alternative route to low cost and large area organic electronics manufacturing.