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Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
2009
Tega
Miki
Pagette
Frank
Ray
Rooks
Haensch
Torii
Keywords:
Optoelectronics
scale
circuit noise
Noise (electronics)
Field-effect transistor
statistical analysis
Threshold voltage
Materials science
Correction
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