Epitaxial Al(110) Films Grown On Heavily-Doped Si(100) by Cluster Beam Deposition.

Epitaxial Al films have been grown on heavily doped Si(100) by neutral cluster beam deposition. The Al films were evaluated by RBS, RHEED, optical interference roughness maps and STM imaging. The results were consistent with the formation of epitaxial Al (110) bi-crystals similar to films grown by ionized cluster beam deposition on lightly-doped Si.