Recent advancements in the field of ballistic and non-ballistic spin-based field-effect transistors

The magnificent increase in the performance of integrated circuits is made possible by semiconductor Physics. Due to very large-scale integration, scaling has approached its fundamental limits, which is the biggest challenge for the semiconductor industry. Therefore, in the recent years researchers across the globe are focusing on emerging field of spintronics. In this thrust area of spintronics research, spin field effect transistor (s-FET) is an extensively studied device. In literature, researchers have studied and optimized two main types of spin field effect transistors namely Ballistic and Non-Ballistic spin-field effect transistors. This research paper has presented the recent developments in the field of Ballistic and Non-Ballistic spin-field effect transistors. This paper has briefly explained the approach to design, development and fabrication of s-FET by taking a case study. Firstly, the spin field effect transistor was proposed by Datta–Das, which has proved to be the milestone in the area of spintronic technology. Mainly, spin transistor is prepared using a ballistic semiconductor, sandwiched between ferromagnetic metallic source and drain contacts.The magnificent increase in the performance of integrated circuits is made possible by semiconductor Physics. Due to very large-scale integration, scaling has approached its fundamental limits, which is the biggest challenge for the semiconductor industry. Therefore, in the recent years researchers across the globe are focusing on emerging field of spintronics. In this thrust area of spintronics research, spin field effect transistor (s-FET) is an extensively studied device. In literature, researchers have studied and optimized two main types of spin field effect transistors namely Ballistic and Non-Ballistic spin-field effect transistors. This research paper has presented the recent developments in the field of Ballistic and Non-Ballistic spin-field effect transistors. This paper has briefly explained the approach to design, development and fabrication of s-FET by taking a case study. Firstly, the spin field effect transistor was proposed by Datta–Das, which has proved to be the milestone in the area of ...