A semiconductor device with replacement gate electrode structures and self-aligned contact elements which are produced by a late contact filling and manufacturing method thereof

A method comprising: Forming a sacrificial filling material laterally adjacent to and above a gate electrode structure is formed on an active region of a semiconductor device and a spacer material comprising germanium, comprising; Exposing a surface of the placeholder material by planarization of the sacrificial filling material; Replacing the placeholder material by at least one metal electrode in the presence of the sacrificial filling material; Removing the sacrificial filler material such that a contact region of the active region is exposed after the spacer material has been replaced; and Forming a conductive material on the exposed contact region such that a contact element is produced.