Ag 중간층 두께에 따른 Ti-doped In 2 O 3 /Ag/Ti-doped In 2 O 3 다층 유연 투명전극의 전기적, 광학적, 기계적 특성 연구

Transparent and conductive Ti-doped In2O3 (TIO)/Ag/Ti-doped In2O3 (TAT) multilayer films were deposited on colorless poly imide (CPI) substrates by direct current (DC) and radio frequency (RF) magnetron sputtering at room temperature. During deposition the thickness of both the top and bottom TIO layer was fixed at 30 nm, while the thickness of the Ag interlayer was varied, to 5, 10, and 15 nm, to enhance the optical, electrical and mechanical properties of the films. In the XRD analysis the TIO films did not show any characteristic peaks in the diffraction pattern. The 10 nm thick Ag inter layer showed some characteristic peaks of Ag (111), (200), (220) and (311), respectively, and the grain size of the Ag interlayer enlarged as Ag thickness increased. To investigate the most efficient Ag interlayer thickness, a figure of merit (FOM) based on the opto-electrical performance of the transparent conducting films was compared. The films with a 10 nm thick Ag interlayer exhibited a higher FOM of 1.71 × 10-2 Ω-1 than the other films. When the radius of the film''s curvature was reduced to 1.7 mm, the TIO single layer films showed a 13 times increase in sheet resistance, while the TAT (30/10/30 nm) films showed an insignificant change in sheet resistance. From the observed results, it was concluded that the Ag interlayer in the TAT multilayer films enhanced the opto-electrical performance of the films and also acted as a potent bridge which assured the high flexibility endurance of the films. (Received April 1, 2021; Accepted April 29, 2021)