Using reverse dynamic I-V characteristics of AlGaAs/GaAs optothyristor for pulsed power-switching applications

The reverse dynamic current-voltage (I-V) characteristics of a high performance MBE grown AlGaAs/GaAs based heterostructure optothyristor have been studied for high power pulsed switching applications. Switched current and dissipated energy per switching as a function of the blocking voltage are presented. Possible reverse switching mechanisms are also discussed in terms of the novel device structure. >