Photoluminescence Study of Copper Selenide Thin Films

Thin films of Copper Selenide of composition of composition Cu7Se4 with thickness 350 nm are deposited on glass substrate at a temperature of 498 K±5 K and pressure of 10−5 mbar using reactive evaporation, a variant of Gunther’s three temperature method with high purity Copper (99.999%) and Selenium (99.99%) as the elemental starting material. The deposited film is characterized structurally using X‐ray Diffraction. The structural parameters such as lattice constant, particle size, dislocation density; number of crystallites per unit area and strain in the film are evaluated. Photoluminescence of the film is analyzed at room temperature using Fluoro Max‐3 Spectrofluorometer.