Method for fabricating cigs thin layer by ald

PURPOSE: A method for manufacturing a CIGS thin film by an atomic layer depositing method is provided to easily manufacture a thin film with high quality and large area by successively supplying precursors like copper, indium, gallium, and selenium to a chamber with a pulse type. CONSTITUTION: A substrate(S) is positioned inside a reactive chamber(10) and maintains the substrate with a specific reaction temperature. A copper precursor compound is supplied and reacted to the reactive chamber. A pursing process is performed to remove non-reactive materials and byproducts. An indium precursor compound is supplied and reacted to a reactive chamber. A gallium precursor compound is supplied and reacted to the reactive chamber. The pursing process is performed to remove the non-reactive materials and the byproducts. A selenium precursor is supplied and reacted to the reactive chamber. The pursing is performed to remove the non-reactive materials and byproducts.