Two-step approach for the growth of Cu0.5Ag0.5InSe2 thin films

Abstract In this work a facile two-step process, comprising of e-beam evaporated precursor deposition of (In/Cu/Ag/Se)× 3 multi-stack over substrate followed by additional selenization treatment, has been used to grow high-quality Cu0.5Ag0.5InSe2 (CAISe) films. The post selenization was performed at distinct temperatures in the range, 300 °C - 500 °C, and the effect of selenization temperature on the growth of CAISe thin films was reported in detail. The post selenization of (In/Cu/Ag/Se)×3 precursors at temperatures