Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission, and oxygen adsorbing

We present a combined experimental and theoretical study to uncover the underlying mechanisms of organic memory devices. The theoretical model we propose is a metallic island array embedding within two electrodes, and the scattering operator method is used to evaluate the tunneling current among them. This theory rebuilds the bistable I-V curves and matches the experiments on several device structures very well. Basically, both memory and negative differential resistance effect in the device are understood comprehensively. To verify the theory further, the experimental correspondence, say, changing the pressure of oxygen, is addressed as well.