Design and Realization of Temperature Stable Surface Acoustic Wave Delay Lines on Silicon and Gallium Arsenide

acoustic wave delay lines on Si and GaAs different multilayered structures are proposed. The basic layer is Si02. However, computer simulations show that a surface "trapping" layer is necessary in the Si02/GaAs structure. Temperature characteristics of the ZnOISi0,ISi and Si02/ZnOl Si structures are also discussed. Experimental results show the variations of the first order temperature coefficient of phase delay versus the thicknesses of the layers. They also show up the variations of the second order temperature coefficient of phase delay versus temperature in the stability region. The temperature characteristics of these structures are comparable to that of the well known ST-X quartz. In order to realize temperature stable surface