Optimization of physical properties of transparent conductive F and Ga co-doped ZnO films for optoelectronic applications

Abstract Highly transparent conductive F and Ga co-doped ZnO films were deposited on a glass substrate with radio frequency magnetron sputtering at various growth temperatures. Growing the films at a substrate temperature of 480 oC produced the lowest resistivity of 6.84×10-4 Ωcm, a carrier concentration of 2.3×1020 cm-3, and a mobility of 39.7 cm2/Vs. These parameters were significantly improved to 3.53×10-4 Ωcm, 3.08×1020 cm-3, and 57.5 cm2/Vs, respectively, after a rapid thermal annealing treatment. All the films showed a high average transmittance of 90% in the optical range 380–1400 nm.