Comparison of Low Frequency Noise Characteristics between Channel and Gate‐Induced Drain Leakage Currents in nMOSFETs

Low frequency noise including 1/f noise and random telegraph noise (RTN) in gate‐induced drain leakage (GIDL) current were fully characterized, and compared with those of channel current in MOSFETs. The GIDL current of sub‐100 nm MOSFETs showed lower noise amplitude by ∼10 times or beyond than channel current at the same current level.