Study of silicon‐doped AlxGayIn1−x−yAs quaternary layers by localized cathodoluminescence and electron acoustic microscopy

Silicon incorporation in Al0.19Ga0.28In0.53As quaternary layers grown by molecular‐beam epitaxy has been studied by low‐temperature (10‐K) cathodoluminescence and scanning electron acoustic microscopy. The maximum attained electron concentration was 6.5×1018 at. cm−3. For heavily doped samples, cathodoluminescence spectra show the presence of several deep levels and a very distinct structure in the near‐band‐edge transition. Even when a maximum is observed for the near‐band‐edge cathodoluminescence emission, deep levels and electron acoustic signals increase as function of the silicon concentration.