The optoelectronic semiconductor component

It is described an optoelectronic semiconductor component (10) comprising a based on a nitride compound semiconductor layer stack having an n-type semiconductor region (6), a p-type semiconductor region (8) and between the n-type semiconductor region (6) and having arranged the p-type semiconductor region (8) active layer (7). The p-type semiconductor region (8) has for forming an electron barrier, a layer sequence (13) having a plurality of p-doped layers (1, 2, 3, 4) of Al