Sub-micron InGaAs Esaki diodes with record high peak current density

Tunneling field effect transistors (TFET), which are gated Esaki tunnel junctions (ETD) operating in the Zener regime, have theoretically been predicted to operate with ultra low power supplies ( P = I P /Area) ever reported for tunnel diodes (975 kA/cm 2 or 9.75 mA/µm 2 ) [3–5]. Other groups have attempted to experimentally demonstrate these structures, but were limited by a combination of output current and series resistance [6]. The key innovation in this study was a process for testing deep submicron Esaki diodes [7], which mitigates these factors.