Ordered GaInP by atomic layer epitaxy

Abstract We report on the successful growth of both ordered and disordered GaInP by atomic layer epitaxy on GaAs substrate. Photoluminescence and transmission electron microscopy are used to characterize the ordering. The composition of the GaInP was self-regulating; close lattice-matching to the substrate was observed for the range of fluxes used in this study. Double crystal X-ray diffraction is used to give indications of the important growth parameters necessary for the self-regulation of the composition. The quality of the atomic layer epitaxy grown material is assessed in a preliminary investigation of GaInP/GaAs/GaInP quantum wells.