Numerical simulation investigation of near-field enhancement and field-induced effect on nanoprobe irradiated by annular laser beam

A simulation study of near-field enhancement on nanoprobe irradiated by annular laser beam is reported. Various nanofabrication, such as nano-welding, nano-manipulation and nano-etching, are produced on metal, semiconductor films and bulk by using the enhanced near-field underneath a probe irradiated by a laser beam. The simulation results show that comparing with the traditional single Gaussian beam, energy distribution of annular laser beam is much more uniform. The results indicate that near-field enhancement on nanoprobe irradiated by annular laser beam is much stronger than by single Gaussian beam. In addition, the relationship between wavelength and the field-induced effect such as temperature, stress and displacement in Z axis is explored. The results show that the shorter the wavelength, the higher the temperature of the probe and the greater the change in stress and deformation. Based on the simulation of the near field enhancement and the field-induced effect, a new scheme combining with annular laser beam and a nanoprobe is anticipated in nano-fabrication.