New compact model for induced gate current noise [MOSFET]
2003
Accurate compact modeling of induced gate noise is a prerequisite for RF CMOS circuit design. Existing models underestimate the induced gate noise for short-channel devices. In this paper, a new model is introduced, based on an improved Klaassen-Prins approach, which accurately accounts for velocity saturation. The model accurately describes noise without fitting any additional parameters.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
3
References
25
Citations
NaN
KQI