Chemical Vapor Deposition of β-LiGaO2 Films on Si(100) Using a Novel Single Precursor

LiGaO 2 films have been grown on Si (100) substrates using a new single precursor [Li(OCH 2 CH 2 OCH 3 ) 2 -Ga(CH 3 ) 2 ] 2 under high vacuum conditions (5 x 10 - 6 Torr). The [Li(OCH 2 CH 2 OCH 3 ) 2 Ga(CH 3 ) 2 ] 2 was synthesized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline LiGaO 2 films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550 °C by metal organic chemical vapor deposition (MOCVD). The single precursor [Li(OCH 2 CH 2 OCH 3 ) 2 -Ga(CH 3 ) 2 ] 2 has been found suitable for chemical vapor deposition of LiGaO 2 thin films on Si substrates.