In0.49Ga0.51P/GaAs heterostructures grown by low-pressure metalorganic chemical vapor deposition

We have successfully grown In0.49Ga0.51P/GaAs heterostructures and made InGaP‐based high electron mobility transistors (HEMTs) by low‐pressure metalorganic chemical vapor deposition. We have found the epitaxial layer of InGaP with a Hall mobility of 4073 cm2/V s (300 K) and the photoluminescence full width at half‐maximum of 1 meV (4.2 K) for GaAs, 12 meV (4.2 K) for In0.49Ga0.51P. Zinc‐induced disordering phenomenon was examined by transmission electron microscope. By Shubnikov‐de Haas measurement, we demonstrated the existence of a two‐dimensional electron gas in InGaP/GaAs heterojunctions. The sheet carrier concentration of 2DEG is around 8.8×1011 cm−2 at 1.5 K. A HEMT device with 1 μm×40 μm gate (pattern) shows an extrinsic transconductance of 65.5 mS/mm and an intrinsic transconductance of 266 mS/mm at 300 K.