Superconductivity in epitaxial InN thin films with large critical fields

We report superconductivity in Chemical Vapor Deposition (CVD) and Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) grown epitaxial InN films having carrier density ∼ 1019 − 1020cm-3. The superconducting phase transition starts at temperatures around Tc,onset∼3 K and the resistance goes to zero completely at Tc0 ∼ 1.6 K. The temperature dependence of the critical field HC2(T) does not obey a two fluid Casimir-Gorter (C-G) model rather it is well explained by the 2-D Tinkham model. The extrapolated value of the zero-temperature perpendicular critical field HC2(0) is found to be between 0.25 − 0.9 T, which is ten times greater than that of Indium metal. It may indicate the intrinsic nature of superconductivity in InN films. The angle dependence of critical field is well described by Lawrence-Doniach (L-D) model, which suggest the existence of quasi-2D superconducting layers.