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Write/Erase Endurance Stress Relaxation for 1Xnm TLC NAND Flash Memory
Write/Erase Endurance Stress Relaxation for 1Xnm TLC NAND Flash Memory
2017
Yoshiaki Deguchi
Atsuro Kobayashi
Ken Takeuchi
Keywords:
NAND gate
Computer hardware
Materials science
Flash memory
Stress relaxation
Optoelectronics
nand flash memory
Correction
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