Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs

The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on-insulator (SOI) MOSFETs has been experimentally examined in this paper. With the downscaling of the channel length, our paper indicates that the power spectral density of the channel noise ( S id ) of the bulk MOSFET becomes less sensitive to temperature due to the smaller degradation of the channel conductance at zero drain bias gd 0 as temperature rises. We also show that the SOI-specific floating-body and self-heating effects would result in higher white-noise gamma factor. Finally, for both the bulk and SOI MOSFETs, since transconductance gm significantly decreases as temperature increases, their minimum noise figure NF min and equivalent noise resistance Rn would degrade with increasing temperature.