Investigation of In x Ga 1−x As FinFET architecture with varying indium (x) concentration and quantum confinement

In x Ga 1-x As FinFETs with varying indium percentage, x, and vertical body thicknesses, are fabricated in a closely packed fin configuration (10 fins per micron of layout area) and their relative performance analyzed and benchmarked. In 0.7 Ga 0.3 As quantum well FinFET (QWFF) exhibits peak field effect mobility of 3,000 cm 2 /V-sec at a fin width of 38nm with highest performance. Short channel In 0.7 Ga 0.3 As QWFF (L g =120nm) exhibits I DSAT of 1.16mA/μm at V G -V T =1V and extrinsic peak g m =1.9mS/μm at V DS =0.5V and I OFF =30 nA/μm. Components of external resistance (R Ext ), side wall DIT, fin profile are analyzed to investigate feasibility of In x Ga 1-x As FinFET for beyond 10nm technology node.