Czochralski growth and characterization of perovskite-type (La,Nd)(Lu,Sc)O3 single crystals with a pseudocubic lattice parameter of about 4.09 Å

Abstract (La,Nd)(Lu,Sc)O3 solid solution single crystals with liquidus temperatures of about 2170 °C were grown by the Czochralski method to provide perovskite substrates with a pseudocubic lattice parameter of 4.086 A for epitaxial purposes. We achieved single crystals with diameters up to 17 mm and total lengths up to 50 mm. Relatively high crystalline quality was confirmed by rocking curve measurements and by energy dispersive Laue mapping. Despite the complex composition, a good chemical homogeneity on the macroscale and nanoscale was verified by micro X-ray fluorescence elemental mapping and transmission electron microscopy. Only minor segregation along the pulling direction was found by chemical analyses using inductively coupled plasma atomic emission spectroscopy. Epitaxial La-doped BaSnO3 films grown on these substrates exhibited a mobility of 181 cm2V–1s–1 at room temperature.